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Samsung 990 EVO Plus 2TB M.2 2280 PCIe 5.0 x2 Internal SSD

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$584.00 cheaper than the new price!!

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Product details

Management number 202047933 Release Date 2025/09/19 List Price $584.00 Model Number 202047933
Category

The Samsung MZ-V9S2T0B/AM is an internal solid-state drive built in the popular M.2 2280 size, offering 2 TB of fast storage for desktops, laptops, and small-form-factor workstations. Designed around Samsung V-NAND TLC flash and an in-house controller, the drive connects through either a PCIe 5.0 x2 or PCIe 4.0 x4 interface and communicates using the NVMe 2.0 protocol, so it fits smoothly into modern PCIe slots while delivering high bandwidth.

In real-world use, you can expect sequential read speeds up to 7 250 MB/s and sequential writes up to 6 300 MB/s. Random performance reaches up to 1 000 000 IOPS for reads and 1 350 000 IOPS for writes, making large game files, 4K video footage, and complex project assets load quickly and respond without lag. Creators who edit high-resolution media, gamers who rely on rapid level loading, and professionals who work with sizable data sets will notice the reduced wait times during every session.

Security features are built in for peace of mind. Hardware-based AES 256-bit encryption comes standard, and the drive is compatible with TCG/Opal 2.0 and Microsoft eDrive, allowing easy integration into managed environments where data protection is essential.

An endurance rating of 1 200 TBW keeps the drive reliable through years of heavy writes. A nickel-coated controller helps disperse heat, so thermal throttling is minimized during extended workloads. Power draw remains modest at 4.6 W while active and drops to only 60 mW in standby, which is valuable for energy-conscious builds and portable systems.

Whether you are upgrading a gaming rig, building a compact creative workstation, or refreshing a laptop that needs both capacity and speed, the Samsung 990 EVO Plus 2 TB provides the throughput, security, and efficiency that demanding users expect.

Highlights:
  • 2 TB capacity in an M.2 2280 form factor
  • PCIe 5.0 x2 and PCIe 4.0 x4 compatibility with NVMe 2.0 support
  • Sequential performance up to 7 250 MB/s read and 6 300 MB/s write
  • Random performance up to 1 000 000 IOPS read and 1 350 000 IOPS write
  • Endurance rating of 1 200 TB total bytes written
  • AES 256-bit, TCG/Opal 2.0, and Microsoft eDrive encryption options
  • Nickel-coated controller aids thermal and power efficiency
  • Power consumption of 4.6 W active and 60 mW standby

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